Properties of proton-implanted p-type Si: supports for the models explaining a novel p–n junction in Si

✍ Scribed by Jianming Li; Min Gao; X.F Duan; Fenglian Wang

• Book ID: 114171640
• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 124 KB
• Volume: 160
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/s0168-583x(99)00603-5