Properties of MgxZn1−xO thin films sputtered in different gases

✍ Scribed by Da-Yong Jiang; Ji-Ying Zhang; Ke-Wei Liu; Chong-Xin Shan; Yan-Min Zhao; Tong Yang; Bin Yao; You-Ming Lu; De-Zhen Shen

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 428 KB
• Volume: 254
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2007.08.092

✦ Synopsis

Mg

x Zn 1Àx O alloy films were prepared on sapphire substrates using Ar and N 2 as the sputtering gases. The effect of the sputtering gas on the structural, optical and electrical properties of the Mg x Zn 1Àx O films was studied. By using N 2 as the sputtering gas, the Mg x Zn 1Àx O film shows ptype conductivity and the band gap is larger than that employing Ar as the sputtering gas. The reason for this phenomenon is thought to be related to the reaction between N-O or N-Zn, and the N-doping.