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Properties of manganese-doped gallium arsenide layers grown by liquid-phase epitaxy from a bismuth melt

✍ Scribed by K. S. Zhuravlev; T. S. Shamirzaev; N. A. Yakusheva

Book ID
110119866
Publisher
Springer
Year
1998
Tongue
English
Weight
101 KB
Volume
32
Category
Article
ISSN
1063-7826

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Institute of Semiconductor Physics, Siberian Branch of the Academy of Sciences of the USSR h'ovosibirsk 90, USSR ## Liquid Phase Epitaxial Growth of Undoped Gallium Arsenide from Bismuth and Gallium Melts Electrical properties of undoped GaAs layers grown from G a and Bi melts under identical con