✦ LIBER ✦

Properties of interconnection on silicon, sapphire, and semi-insulating gallium arsenide substrates

✍ Scribed by Han-Tzong Yuan; Yung-Tao Lin; Shang-Yi Chiang

Book ID: 114594068
Publisher: IEEE
Year: 1982
Tongue: English
Weight: 692 KB
Volume: 29
Category: Article
ISSN: 0018-9383
DOI: 10.1109/t-ed.1982.20756

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Some electrical properties of epitaxial

Some electrical properties of epitaxial germanium films deposited on semi-insulating gallium arsenide substrate

✍ V Rybka; Z Ševčík; P Krejčí; E Dudrová 📂 Article 📅 1972 🏛 Elsevier Science 🌐 English ⚖ 627 KB

Effects of thermal annealing on the elec

Effects of thermal annealing on the electrical properties of large diameter semi-insulating gallium arsenide

✍ Hongyan Liu; Weizhong Sun; Qiuyan Hao; Haiyun Wang; Caichi Liu 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 219 KB

Influence of compensation level on EL2 c

Influence of compensation level on EL2 concentration in semi-insulating gallium arsenide

✍ U. Kretzer; H. Ch. Alt 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 273 KB

High-quality YBa2Cu3O7films on 4-in. Waf

High-quality YBa2Cu3O7films on 4-in. Wafers of sapphire, gallium arsenide, and silicon

✍ W. Prusseit; B. Utz; P. Berberich; H. Kinder 📂 Article 📅 1994 🏛 Springer 🌐 English ⚖ 215 KB

Effects of Heat-Treatment Duration and D

Effects of Heat-Treatment Duration and Dislocation Density on the Transport Properties of Semi-insulating Gallium Arsenide Crystals

✍ M. B. Litvinova; S. V. Shutov; I. V. Boriskin 📂 Article 📅 2001 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 29 KB

Chemical vapor deposition of β-SiC on si

Chemical vapor deposition of β-SiC on silicon-on-sapphire and silicon-on-insulator substrates

✍ J.C. Pazik; G. Kelner; N. Bottka; J.A. Freitas Jr. 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 381 KB

Cubic silicon carbide (t-SiC) films have been grown epitaxially on silicon-on-sapphire (SOS) substrates by chemical vapor deposition. A fresh layer of silicon is first deposited in situ on the SOS substrate at approximately 1050 °C. The silicon layer is then carbonized while being heated to 1360 °C.