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Properties of Ge-doped GaAs and AlxGa1−xAs, Sn-doped AlxGa1−xAs and Si-Te-doped GaAs

✍ Scribed by K. K. Shih; G. D. Pettit

Book ID
112812586
Publisher
Springer US
Year
1974
Tongue
English
Weight
550 KB
Volume
3
Category
Article
ISSN
0361-5235

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Research on dynamics in modulation-doped
Research on dynamics in modulation-doped GaAs/AlxGa1−xAs heterostructures
✍ Guo-Hui Li; Shi-Ping Zhou; De-Ming Xu 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 137 KB

## Abstract We discuss the dynamics of the forced modulation‐doped Al~__x__~Ga~1−__x__~As heterostructure device governed by the coupled differential equations, which is operative in the state far from thermodynamic equilibrium. Biased with an appropriate dc field, the system exhibits two states: s