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Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures

✍ Scribed by D Chiba; N Akiba; F Matsukura; Y Ohno; H Ohno

Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
108 KB
Volume
10
Category
Article
ISSN
1386-9477

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We have systematically investigated the magnetic properties of Si-doped (Ga,Mn)As films. When the Si content is low, both Curie temperature (T C ) and carrier density (p) decrease compared with undoped (Ga,Mn)As, whereas a monotonic increase of T C and p is observed with further increase in the dopi