Influence of Si doping on magnetic properties of (Ga,Mn)As

✍ Scribed by W.Z. Wang; J.J. Deng; J. Lu; L. Chen; Y. Ji; J.H. Zhao

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 599 KB
• Volume: 41
• Category: Article
• ISSN: 1386-9477
• DOI: 10.1016/j.physe.2008.06.011

✦ Synopsis

We have systematically investigated the magnetic properties of Si-doped (Ga,Mn)As films. When the Si content is low, both Curie temperature (T C ) and carrier density (p) decrease compared with undoped (Ga,Mn)As, whereas a monotonic increase of T C and p is observed with further increase in the doping content of Si. We discuss the possible mechanism for the changes obtained by different Si doping contents and attribute the results to a competition between the existence of Si Ga (Si substitutes for Ga site) that acts as a donor and Si I (Si interstitials) which is in favor of the improvement of ferromagnetism.