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Properties of compensated GaAs light-emitting diodes following 60Co irradiation

✍ Scribed by Stewart Share; Arnold S. Epstein; Roland A. Polimadei


Publisher
Elsevier Science
Year
1975
Tongue
English
Weight
929 KB
Volume
18
Category
Article
ISSN
0038-1101

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Electroluminescence properties of GaInP/
✍ Yoshikazu Terai; Takehiro Tokuno; Hideki Ichida; Yasuo Kanematsu; Yasufumi Fujiw πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 315 KB

Low-temperature Er-related electroluminescence (EL) properties have been investigated in Er,O-codoped GaAs (GaAs:Er,O) light-emitting diode (LED) grown by organometallic vapor phase epitaxy. Under forward bias at 77 K, the EL spectra from a cleaved edge of the LED were dominated by the luminescence