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Properties of CeO2 and CeO2−x films Part II. High temperature properties

✍ Scribed by R.G. Schwab; R.A. Steiner; G. Mages; H.-J. Beie


Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
559 KB
Volume
207
Category
Article
ISSN
0040-6090

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Ceriutii Oxide films were prepared by vaciiurii therinal evaporation from tantaluni hoat i n a conventional vacuum coating unit. Current-voltage characteristics were studied for different filni thicknesses. The breakdown voltage ( VB) arid dielectric field strength ( E B ) were calculated. It is fbu