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Properties of (Al,Ga)As/GaAs heterostructures grown by molecular beam epitaxy with growth interruption

✍ Scribed by C.W. Tu; R.C. Miller; B.A. Wilson; P.M. Petroff; T.D. Harris; R.F. Kopf; S.K. Sputz; M.G. Lamont

Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
423 KB
Volume
81
Category
Article
ISSN
0022-0248

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