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Properties and characterization of low-temperature amorphous PECVD silicon nitride films for solar cell passivation

✍ Scribed by S. Ali; M. Gharghi; S. Sivoththaman; K. Zeaiter


Book ID
106390248
Publisher
Springer
Year
2005
Tongue
English
Weight
1014 KB
Volume
40
Category
Article
ISSN
0022-2461

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## Abstract Zinc Sulphide films were grown by pulsed electron deposition (PED) from room temperature to 350 Β°C to investigate the possibility of its application in solar cells, in particular as an alternative buffer layer deposited at low temperature. The films were characterized by X‐ray diffracti