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Progress in the Molecular Beam Epitaxy of HgCdTe on Large-Area Si and CdZnTe Substrates

โœ Scribed by M. Reddy; J. M. Peterson; S. M. Johnson; T. Vang; J. A. Franklin; E. A. Patten; W. A. Radford; J. W. Bangs; D. D. Lofgreen


Book ID
107455527
Publisher
Springer US
Year
2009
Tongue
English
Weight
543 KB
Volume
38
Category
Article
ISSN
0361-5235

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๐Ÿ“œ SIMILAR VOLUMES


Optical properties of undoped, Be-doped,
โœ Soo-Ghang Ihn; Mee-Yi Ryu; Jong-In Song ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 881 KB

The photoluminescence (PL) of undoped, Si-doped, and Be-doped GaAs nanowires (NWs) grown on Si substrates by molecular beam epitaxy was investigated. PL peaks of the undoped and Be-doped NWs were observed at higher energies than the bandgap energy of GaAs bulk. According to X-ray diffraction analysi