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Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

✍ Scribed by Huaxiang Yin; Sunil Kim; Hyuck Lim; Yosep Min; Chang Jung Kim; Ihun Song; Jaechul Park; Sang-Wook Kim; Tikhonovsky, A.; Jaewoong Hyun; Youngsoo Park

Book ID: 114619494
Publisher: IEEE
Year: 2008
Tongue: English
Weight: 894 KB
Volume: 55
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2008.926727

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