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Production of TiN thin films by N2-laser-ablated Ti atoms in nitrogen gas atmospheres

✍ Scribed by R. Castell; A. Ruiz; C. Castell; C. Suárez

Publisher
Springer
Year
1999
Tongue
English
Weight
74 KB
Volume
69
Category
Article
ISSN
1432-0630

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Sizeable enhancement of anti-weak locali
Sizeable enhancement of anti-weak localization effect in In2O3−x thin film caused by H2 gas mixing in N2 gas atmosphere on heat treatment
✍ Hiromi Kobori; Masaya Kawaguchi; Naoki Hatta; Tyuzi Ohyama 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 81 KB

Through magneto-conductance measurements, we have observed sizeable enhancement of anti-weak localization (AWL) e ect in In2O3-x thin ÿlm (60 nm) caused by H2 gas mixing (10%) in N2 gas (90%) atmosphere on the heat treatment (HT). In case of the HT in pure N2 gas, the AWL e ect is recognized, but is