✦ LIBER ✦
Sizeable enhancement of anti-weak localization effect in In2O3−x thin film caused by H2 gas mixing in N2 gas atmosphere on heat treatment
✍ Scribed by Hiromi Kobori; Masaya Kawaguchi; Naoki Hatta; Tyuzi Ohyama
- Publisher
- Elsevier Science
- Year
- 2003
- Tongue
- English
- Weight
- 81 KB
- Volume
- 18
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
Through magneto-conductance measurements, we have observed sizeable enhancement of anti-weak localization (AWL) e ect in In2O3-x thin ÿlm (60 nm) caused by H2 gas mixing (10%) in N2 gas (90%) atmosphere on the heat treatment (HT). In case of the HT in pure N2 gas, the AWL e ect is recognized, but is very small. With respect to those experimental results, we conclude that interstitial indium atoms in In2O3-x are e ectively generated and the AWL e ect due to the spin-orbit interaction is come up.