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Production of low electron temperature ECR plasma for thin film deposition

โœ Scribed by Naho Itagaki; Yoko Ueda; Nobuo Ishii; Yoshinobu Kawai

Book ID
108422903
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
215 KB
Volume
142-144
Category
Article
ISSN
0257-8972

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Silicon nitride films of various compositions have been deposited on silicon substrate by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) technique from mixtures of Ar, N and SiH as precursors. Film 2 4 composition and refractive index as a function of deposition p