𝔖 Bobbio Scriptorium

✦ LIBER ✦

Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics

✍ Scribed by YanDong He; Xing Zhang; YangYuan Wang

Book ID: 107359974
Publisher: Science in China Press (SCP)
Year: 2011
Tongue: English
Weight: 537 KB
Volume: 54
Category: Article
ISSN: 1674-733X
DOI: 10.1007/s11432-011-4321-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[Japan Soc. Applied Phys 2003 Symposium

[Japan Soc. Applied Phys 2003 Symposium on VLSI Technology. Digest of Technical Papers - Kyoto, Japan (10-12 June 2003)] 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) - Low-energy nitrogen plasmas for 65-nm node oxynitride gate dielectrics: a correlation of plasma characteristics and device parameters

✍ Kraus, P.A.; Ahmed, K.; Chua, T.C.; Ershov, M.; Karbasi, H.; Olsen, C.S.; Nouri, 📂 Article 📅 2003 🏛 Japan Soc. Applied Phys 🌐 Japanese ⚖ 172 KB

[IEEE Digest of Technical Papers. 2004 S

[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - MOSFET current drive optimization using silicon nitride capping layer for 65-nm technology node

✍ Pidin, S.; Mori, T.; Nakamura, R.; Saiki, T.; Tanabe, R.; Satoh, S.; Kase, M.; H 📂 Article 📅 2004 🏛 IEEE ⚖ 184 KB