โ Scribed by R.K. Purohit; G.C. Dubey; S. Dayal; R. Gulati; V.R. Balakrishnan; Koteshwar Rao; A.K. Sreedhar
No coin nor oath required. For personal study only.
Semi-insulating liquid-incapsulated Czochralski GaAs wafers are generally used as substrates for the fabrication of monolithic microwave integrated circuits. In the fabrication process, the wafer is subjected to temperature cycling during the various stages of processing, namely post-ion implantation annealing, plasma deposition of dielectrics, deposition of ohmic contacts and its alloying etc., which can induce strains and dislocations in the host wafer.
In this paper, a study using the photoluminescence (PL) technique has been carried out to understand the behaviour of different peaks under different processing conditions. Owing to temperature cycling and plasma deposition, it affects the PL peaks which is indicative of different types of defect introduced during processing.
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