Procedure for rapid spectroscopic control of the distribution of oxygen and of doping impurities in silicon ingots
β Scribed by V. V. Litvinov; A. N. Petukh; Yu. M. Pokotilo
- Book ID
- 110614279
- Publisher
- Springer US
- Year
- 1997
- Tongue
- English
- Weight
- 364 KB
- Volume
- 64
- Category
- Article
- ISSN
- 0021-9037
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Secondary ion yields are known to be strongly enhanced by the presence of oxygen in the analysed sample. The magnitude of the yield enhancement is often signiΓcantly di β erent for impurity and matrix ion species. This kind of SIMS matrix e β ect severely aggravates concentration calibration in depth