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Problems of Surface Morphology and Layer Deposition during Plasma Etching Processes (II) Si-etching in CF4-, CF4/O2-and CF4/H2 Plasmas

โœ Scribed by H.-J. Tiller; J. Krausse; R. Voigt


Publisher
John Wiley and Sons
Year
1982
Tongue
English
Weight
355 KB
Volume
17
Category
Article
ISSN
0232-1300

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๐Ÿ“œ SIMILAR VOLUMES


Problems of surface morphology and layer
โœ Dr. H.-J. Tiller; K. Apfel; R. Voigt ๐Ÿ“‚ Article ๐Ÿ“… 1981 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 174 KB

Plasma etching of Al is a recently development process of patterqing A1 layers in microand submicrodimensions (SCHAIBLE, SCHWARTZ; SCHAIBLE et al.; TILLER). The A1 etching process is successful only in a planar reactor (VOSSBN) requiring a direct plasma substrate interaction, that means an interacti