Probing Surface Oxidation of Reduced Uranium Dioxide Thin Film Using Synchrotron Radiation
โ Scribed by Senanayake, S.D.; Waterhouse, G.I.N.; Chan, A.S.Y.; Madey, T.E.; Mullins, D.R.; Idriss, H.
- Book ID
- 120311826
- Publisher
- American Chemical Society
- Year
- 2007
- Tongue
- English
- Weight
- 300 KB
- Volume
- 111
- Category
- Article
- ISSN
- 1932-7447
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The effective attenuation lengths (EALs) of photoelectrons in thin silicon dioxide films on an Si(100) substrate were measured as a function of electron energy using synchrotron radiation as an energy-tunable excitation source. The ratios of EALs to inelastic mean free paths (IMFPs) calculated from
We have measured effective attenuation lengths (EALs) of 140-1100 eV electrons in ultrathin silicon dioxide layers using synchrotron radiation. These EALs were generally smaller than those reported previously, although there was agreement with the values measured by Hochella and Carim (Surf. Sci. Le