C-doped InP HBT epiwafers for 40 Gb/s
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Article
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2002
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Elsevier Science
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English
β 148 KB
has developed a prototype SiGe:C HBT with performance of 144 GHz and f max = 174 GHz. SiGe's performance deteriorates quickly after heat treatment when integrated with CMOS, according to ULSI