✦ LIBER ✦

C-doped InP HBT epiwafers for 40 Gb/s

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 148 KB
Volume: 15
Category: Article
ISSN: 0961-1290
DOI: 10.1016/s0961-1290(02)85024-4

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✦ Synopsis

has developed a prototype SiGe:C HBT with performance of 144 GHz and f max = 174 GHz. SiGe's performance deteriorates quickly after heat treatment when integrated with CMOS, according to ULSI

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