Pressure-Induced Phase Transitions in Cadmium Thiogallate CdGa2Se4
β Scribed by A. Grzechnik; V.V. Ursaki; K. Syassen; I. Loa; I.M. Tiginyanu; M. Hanfland
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 376 KB
- Volume
- 160
- Category
- Article
- ISSN
- 0022-4596
No coin nor oath required. For personal study only.
β¦ Synopsis
The high-pressure behavior of semiconducting cadmium thiogallate CdGa 2 Se 4 with the defect chalcopyrite structure (I4 , Z β«Ψβ¬ 2) is studied by in situ angle-dispersive synchrotron X-ray powder di4raction and optical re6ectivity measurements in a diamond anvil cell at room temperature. At 21 GPa an or-der+disorder phase transition to the rock-salt structure (F4 3m, Z β«Ψβ¬ 4) occurs. Upon decompression, the metallic NaCltype polymorph transforms into zinc-blende (Fm3 m, Z β«Ψβ¬ 4) at pressures of 7.5+4 GPa. The recovered metastable semiconducting material is of the zinc-blende type.
π SIMILAR VOLUMES
The effects of pressure on the frequencies and band structures of the Raman active inter-and intramolecular vibrations of 1,2,4,5-tetrafluorobenzene crystal were studied under hydrostatic pressures from 1 atm to 4 GPa at 300 K in a gasketed diamond anvil cell. Changes of the Raman frequencies and ba