Pressure dependence of electronic and optical properties of Zinc-blende GaN, BN and their B0.25Ga0.75N alloy
โ Scribed by R. Riane; A. Zaoui; S.F. Matar; A. Abdiche
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 358 KB
- Volume
- 405
- Category
- Article
- ISSN
- 0921-4526
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๐ SIMILAR VOLUMES
In order to clarify the electronic and optical properties of wide-energy gap zinc-blende structures ZnSe, MgSe and their alloys (ZnSe) 1-x (MgSe) x , a simple pseudo-potential scheme (EPM) within an effective potential, the virtual crystal approximation (VCA) which incorporates compositional disorde
In order to clarify the electronic properties of the ternary compound semiconductor GaPN, in a zinc-blende structure, a simple pseudopotential scheme (EPM), within an effective potential (VCA), is proposed. The effects of disorder and spin-orbit coupling are neglected. Various quantities, such as en