Pressure Dependence of Electrical Resistivity in Intercalation Compounds MxTiS2 (M = 3d Transition Metal)
β Scribed by M. Inoue; M. Koyano; K. Fukushima; H. Negishi; M. Sasaki
- Publisher
- John Wiley and Sons
- Year
- 1987
- Tongue
- English
- Weight
- 442 KB
- Volume
- 139
- Category
- Article
- ISSN
- 0370-1972
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π SIMILAR VOLUMES
A model calculation shows that phonon-induced interband scattering of carriers from a low-mass band into a second, high-mass band separated by a distance qo in the reciprocal lattice can produce a saturating term in the electrical resistivity at high temperatures. A balance may occur between the inc
Temperature dependence of the resistivity has been measured between 4.2 K and 273 K on C,F, C,TiF, and C,VF,. The resistivity obeys the equation, p(T) = A + BT + CT\* in the temperature range up to around 170 K and 220 K, where C,F and C,VF, exhibit anomalous inflections possibly connected with phas