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Saturating contribution to the electrical resistivity from electron-phonon interactions in transition metal compounds

✍ Scribed by C. S. Ting; T. M. Snyder; S. J. Williamson

Publisher: Springer US
Year: 1979
Tongue: English
Weight: 286 KB
Volume: 36
Category: Article
ISSN: 0022-2291
DOI: 10.1007/bf00116983

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✦ Synopsis

A model calculation shows that phonon-induced interband scattering of carriers from a low-mass band into a second, high-mass band separated by a distance qo in the reciprocal lattice can produce a saturating term in the electrical resistivity at high temperatures. A balance may occur between the increasing number of phonons and the decreasing number of carriers in appropriate states for scattering by this process if the relevant phonons have only a narrow spread in energies. The application of this analysis to V3Si is presented.

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