We present a review of the effect of high pressure on the electronic, optical and defect properties in chalcopyrite semiconductors with the formula I±III±VI 2 . We show that the linear pressure coefficients of the band gap in these materials are not constant. While the bulk moduli of this family of
✦ LIBER ✦
Pressure dependence of deep centers in II–VI semiconductors: Theory
✍ Scribed by C.H. Park; D.J. Chadi
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 433 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0022-3697
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We present the pressure dependence of the defect emissions in the chalcopyrite alloy semiconductor Ag x Cu 1--x GaS 2 for values of the alloy concentration x varying between 0 and 1. A large variation in the pressure coefficients of the different defect emissions with x was found. In one alloy conce