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Pressure assisted evolution of defects in silicon

โœ Scribed by C. A. Londos; M. S. Potsidi; J. Bak-Misiuk; A. Misiuk; V. V. Emtsev

Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
61 KB
Volume
38
Category
Article
ISSN
0232-1300

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A review of the selected results concerning the role of hydrostatic pressure in studies of impurity and defect centers in IIIยฑV nitrides, and in InGaAsN with small amount of N is presented. Firstly, the shallow to deep impurity state transition for basic donors, i.e. Si and O in GaN and AlGaN and th