Preparation of ZnO thin film by the sol-gel method using low temperature ozone oxidation
โ Scribed by Ehara, Takashi ;Ueno, Takaaki ;Abe, Junya
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 262 KB
- Volume
- 207
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
โฆ Synopsis
Abstract
Zinc oxide thin films have been prepared by the solโgel method from a 2โmethoxyethanol solution of zinc acetate dihydrate on SiO~2~ substrates using air, pure oxygen, and 1% ozone in oxygen as oxygen source. In the cases where air or oxygen was used as the oxygen source for thermal annealing, samples annealed at 600 to 800โยฐC exhibit a (0002) peak in Xโray diffraction (XRD). A sample annealed at 700โยฐC exhibited the highest (0002) peak intensity in conventional thermal annealing. However, the case using 1% ozone in oxygen as the atmosphere presented different results. A sample treated in 1% ozone at 100โยฐC had peak intensity in XRD (0002) comparable with samples annealed at several hundreds of degree in air or oxygen. This result indicates that the high oxidation efficiency of ozone is useful in decreasing the processing temperature of the solโgel method.
๐ SIMILAR VOLUMES
## Abstract Zn~1โ__x__~ Mg__~x~__ O (ZMO) thin films with __x__ = 0, 0.1, 0.2, and 0.3 were prepared on Si(100) substrates by the solโgel method. The influence of Mg content on the structural and the optical properties was studied by Xโray diffraction and spectroscopic ellipsometry (SE) in the UVโv
Transparent and conductive high preferential c-axis oriented Ni-doped ZnO (NZO) thin films as a function of Ni content have been prepared by sol-gel method using zinc acetate and nickel acetate as starting material, anhydrous ethanol and 2-methodxyethanol as solvent. The NZO thin films with a dopant