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Preparation of ZnO thin film by the sol-gel method using low temperature ozone oxidation

โœ Scribed by Ehara, Takashi ;Ueno, Takaaki ;Abe, Junya


Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
262 KB
Volume
207
Category
Article
ISSN
0031-8965

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โœฆ Synopsis


Abstract

Zinc oxide thin films have been prepared by the solโ€“gel method from a 2โ€methoxyethanol solution of zinc acetate dihydrate on SiO~2~ substrates using air, pure oxygen, and 1% ozone in oxygen as oxygen source. In the cases where air or oxygen was used as the oxygen source for thermal annealing, samples annealed at 600 to 800โ€‰ยฐC exhibit a (0002) peak in Xโ€ray diffraction (XRD). A sample annealed at 700โ€‰ยฐC exhibited the highest (0002) peak intensity in conventional thermal annealing. However, the case using 1% ozone in oxygen as the atmosphere presented different results. A sample treated in 1% ozone at 100โ€‰ยฐC had peak intensity in XRD (0002) comparable with samples annealed at several hundreds of degree in air or oxygen. This result indicates that the high oxidation efficiency of ozone is useful in decreasing the processing temperature of the solโ€“gel method.


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