Preparation of YbBa2Cu3O7-x films on Si(100) substrates using SrTiO3 buffer layers
✍ Scribed by Ishiwara, Hiroshi; Tsuji, Naoki; Mori, Hiroyuki; Nohira, Hiroshi
- Book ID
- 115314986
- Publisher
- American Institute of Physics
- Year
- 1992
- Tongue
- English
- Weight
- 537 KB
- Volume
- 61
- Category
- Article
- ISSN
- 0003-6951
- DOI
- 10.1063/1.107517
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SrTiOs buffer layers have been grown on MgO ( 100) substrates to provide a better match to RF sputtered YBa&urOr\_, films. This heterostntcture allows a highly textured growth to be achieved over thicknesses as high as 1 urn. The granularity of films grown without buffer layer on MgO ( 100) and YSZ
For the preparation of epitaxial high quality YBa2CuaO7 -films on silicon substrates, Y-stabilized Zr02 (YSZ) buffer layers turn out to serve as effective barriers against interdiffusion and show an epitaxial relationship with the silicon (100) single-crystal as well as the superconductor. A low tem