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Preparation of large area freestanding GaN by laser lift-off technology

✍ Scribed by J. Xu; R. Zhang; Y.P. Wang; X.Q. Xiu; B. Shen; S.L. Gu; Y. Shi; Z.G. Liu; Y.D. Zheng

Book ID
117356804
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
198 KB
Volume
56
Category
Article
ISSN
0167-577X

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Preparation of GaN-based cross-sectional
Preparation of GaN-based cross-sectional TEM specimens by laser lift-off
✍ Li Zilan; Hu Xiaodong; Chen Ke; Nie Ruijuan; Luo Xuhui; Zhang Xiaoping; Yu Tongj πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 246 KB

Laser lift-off (LLO) technology is successfully used to prepare GaN-based TEM cross-sectional specimens. Detailed procedures of the method to prepare the specimens are demonstrated. Large thin areas suitable for TEM analysis were obtained. TEM images of the resulting GaN interface are studied, and t