Preparation of ITO electrode on the organic layer by sputtering
โ Scribed by Kuniaki Tanaka; Mao Kasahara; Hiroaki Usui
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 648 KB
- Volume
- 83
- Category
- Article
- ISSN
- 8756-663X
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โฆ Synopsis
The ITO known as a transparent electrode was grown on an organic layer of an organic EL device by sputtering using a shield plate. EL devices were fabricated by reversing the order of stacking the layers (Glass/Al/PVCz:Cou-marin6/ITO) compared to the conventional method. Green emission similar to those of the conventionally stacked devices was observed. From the results of SEM observations, degradation of the organic layer by the incidence of high energy particles during the sputtering was suggested. No high-luminance emission was found. However, in the inversely stacked EL device fabricated by the two-stage evaporation method, which relaxes the sputtering conditions in the initial stage of ITO deposition, had superior device life time, because the top ITO layer acts as a protection layer of the device.
๐ SIMILAR VOLUMES
Transparent conducting indium tin oxide (ITO) thin films were prepared on glass substrates by a magnetron sputter type negative ion source which requires cesium (Cs) vapor injection for surface negative ionization on the ITO target surface. Although the film was prepared at 70 ยฐC, it attained high o