The luminescence and optoelectrical properties of ITO films prepared by a sputter type negative metal ion deposition
✍ Scribed by H.S. Jang; D.H. Choi; Y.S. Kim; J.H. Lee; Daeil Kim
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 830 KB
- Volume
- 278
- Category
- Article
- ISSN
- 0030-4018
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✦ Synopsis
Transparent conducting indium tin oxide (ITO) thin films were prepared on glass substrates by a magnetron sputter type negative ion source which requires cesium (Cs) vapor injection for surface negative ionization on the ITO target surface. Although the film was prepared at 70 °C, it attained high optical transmittance, 88% and low resistivity, 2.03 • 10 À4 X cm, at an optimized Cs partial pressure of P Cs = 1.7 • 10 À3 Pa. The as-deposited ITO films have a poly-crystalline structure with (2 1 1), (2 2 2), (4 0 0), (4 1 1) and (4 4 0) reflections.
Also, ITO films prepared at P Cs = 1.7 • 10 À3 Pa were post-deposition vacuum annealed at 300 °C for 30 min. The films had a resistivity of 1.8 • 10 À4 X cm and a transparency of 89.2%. The post-deposition vacuum annealed ITO film was used as an anode for a transparent organic light emitting diode (TOLED). A maximum luminance of 19,000 cd/m 2 was obtained.