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Preparation and properties of TiO2–SiO2 (1 : 1) films prepared by a complexing agent-assisted sol–gel process

✍ Scribed by Toshikazu Nishide; Fujio Mizukami


Book ID
108388955
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
206 KB
Volume
298
Category
Article
ISSN
0040-6090

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Tin oxide (SnO 2 ) epitaxial thin films have been prepared on TiO 2 (0 0 1) substrates at different temperatures by metalorganic chemical vapor deposition (MOCVD) method. The obtained films were pure SnO 2 with the tetragonal rutile structure. An in-plane orientation relationship of (0 0 1) SnO 2 :(