Preparation and properties of Nb Josephson junctions with thin Al layers
β Scribed by Gurvitch, M.; Washington, M.; Huggins, H.; Rowell, J.
- Book ID
- 114646376
- Publisher
- IEEE
- Year
- 1983
- Tongue
- English
- Weight
- 405 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0018-9464
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
~Istituto di Cibernetica del C.N.R., 1-80072, Arco Felice (NA), Italy We present three novel processes for the fabrication of two or more vertically stacked Josephson tunnel junctions all based on the Nb/Al -AlOx/Nb technology. The dynamical properties of stacks of up to five, high-quality and low
The oxidation of thin AI layers on niobium has been investigated by reflectivity measurements. The simple experimental set-up allows for in situ observation of tunnel barrier growth with good time resolution. The dynamics of the AI203 layer growth is examined as a function of 02 pressure. The observ