Preparation and properties of mixed CdSxTer1−x thin films

✍ Scribed by R. Radojcic; A.E. Hill; M.J. Hampshire

• Publisher: Elsevier Science
• Year: 1981
• Weight: 353 KB
• Volume: 4
• Category: Article
• ISSN: 0379-6787
• DOI: 10.1016/0379-6787(81)90059-4

✦ Synopsis

An apparatus is described which is capable of depositing mixed semiconductor films by a novel co-evaporation technique. This was used to deposit a uniform mixed film of CdS~Tel x with various values of the composition factor x. Mixed films with the composition factor x varying from 0 to 1 were prepared and characterized. The band gap was found to vary with composition from 1.5 to 2.4 eV with a minimum corresponding to a composition factor of approximately 0.5. With this novel technique it was possible to co-evaporate dopant materials, giving control of the conductivity type (p or n) over a particular section of the films' composition range. The CdS-rich mixtures, however, could be prepared only as n-type films. It was possible to control the films' resistivity by varying the concentration of the dopants. The results from the work indicated that this technique could be used for the preparation of thin film graded band gap solar cells.