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Preparation and properties of diodes on low-resistivity zinc phosphide films

โœ Scribed by A. Haque; T. Dinh; N. Christoforou; D.E. Brodie; J.D. Leslie


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
594 KB
Volume
176
Category
Article
ISSN
0040-6090

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Preparation and Electrical Properties of
โœ Y. Kumashiro; T. Yokoyama; T. Sakamoto; T. Fujita ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 226 KB

Boron and boron phosphide films were prepared by gas source molecular beam deposition on sapphire crystal at various substrate temperatures up to 800ยฐC using cracked B 2 H 6 (2% in H 2 ) at 300ยฐC and cracked PH 3 (20% in H 2 ) at 900ยฐC. The substrate temperatures and gas flow rates of the reactant g