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Preparation and properties of a junction between p-SiC and n-CdSe

โœ Scribed by N. I. Dovgoshei; M. V. Shtilikha; D. V. Chepur

Book ID
112415681
Publisher
Springer
Year
1968
Tongue
English
Weight
91 KB
Volume
11
Category
Article
ISSN
1573-9228

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## Abstract The electrical and low frequency noise properties of 4Hโ€SiC p^+^โ€“nโ€“n^+^ junctions have been investigated at different temperatures. The forward currentโ€“voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t