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MBE growth of 3C·SiC/6·SiC and the electric properties of its p-n junction

✍ Scribed by Shigeo Kaneda; Yoshiki Sakamoto; Tadashi Mihara; Takao Tanaka

Book ID
107790012
Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
459 KB
Volume
81
Category
Article
ISSN
0022-0248

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## Abstract The electrical and low frequency noise properties of 4H‐SiC p^+^–n–n^+^ junctions have been investigated at different temperatures. The forward current–voltage characteristics are described as the sum of a recombination current originating from carrier recombination on the sidewall of t