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Preparation and ESCA analysis of the germanium surface: electrical characterization of the Al2O3Ge and Al2O3:GeO2Ge structures

✍ Scribed by Z. Benamara; B. Gruzza


Book ID
113300418
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
447 KB
Volume
39
Category
Article
ISSN
0254-0584

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Multilayers of Ge nanocrystals embedded
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In this paper, Ge/Al 2 O 3 multilayer systems were grown by pulsed laser ablation. The grown samples were annealed at 900 Β°C to promote the formation of Ge nanocrystals. Rutherford backscattering spectroscopy and transmission electron microscopy confirmed the presence of a multilayer system. Grazing