Preparation and characterization of CBN ternary compounds with nano-structure
β Scribed by Y.H. Xiong; S. Yang; C.S. Xiong; H.L. Pi; J. Zhang; Z.M. Ren; Y.T. Mai; W. Xu; G.H. Dai; S.J. Song; J. Xiong; L. Zhang; Z.C. Xia; S.L. Yuan
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 321 KB
- Volume
- 382
- Category
- Article
- ISSN
- 0921-4526
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Carbon doped SiOC(-H) films with low dielectric constant were deposited on p-type Si(100) substrates by using plasma enhanced chemical vapor deposition from dimethyldimethoxysilane [DMDMOS, C 4 H 12 O 2 Si] and oxygen gas as precursors. The SiOC(-H) films were deposited at different radio frequency
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