Electrical characterization of low-k films with nano-pore structure prepared with DMDMOS/O2 precursors

✍ Scribed by Chang Young Kim; R. Navamathavan; Heon Ju Lee; Chi Kyu Choi

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 801 KB
• Volume: 202
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2008.06.044

✦ Synopsis

Carbon doped SiOC(-H) films with low dielectric constant were deposited on p-type Si(100) substrates by using plasma enhanced chemical vapor deposition from dimethyldimethoxysilane [DMDMOS, C 4 H 12 O 2 Si] and oxygen gas as precursors. The SiOC(-H) films were deposited at different radio frequency (rf) powers from 400 to 800 W. Fourier transform infrared was used to investigate the bonding configurations of the SiOC(-H) films. The influence of the rf power effect on the formation mechanism of SiOC(-H) films was correlated. Relative content of Si-CH 3 bonds decreased with increasing rf power up to 700 W whereas -CH n related bonds increased with rf power. However, the film with an rf power of 800 W shows increase of Si-CH 3 and decrease of -CH n bonds, behaving like Si-O 2 film. The leakage current density was found to be 2.7 × 10 -9 A/cm 2 and also the lowest dielectric constant of 2.04 for the SiOC(-H) films deposited with an rf power of 700 W.