Preparation and characterisation of electrodeposited n-CdS/p-CdTe thin film solar cells

✍ Scribed by S.K. Das; G.C. Morris

• Publisher: Elsevier Science
• Year: 1993
• Tongue: English
• Weight: 539 KB
• Volume: 28
• Category: Article
• ISSN: 0927-0248
• DOI: 10.1016/0927-0248(93)90118-m

✦ Synopsis

Cadmium sulphide and cadmium telluride films have been electrodeposited for n-CdS/p-CdTe solar cells. Cell efficiency varied considerably from 9.5% to 11.5% for each deposition set. The reverse saturation currents of 9.5% and 11.5% cells at 298 K were 25 and 6.7 nA cm -2, respectively. The cells with higher efficiency has a lower number of interface states than the less efficient cells. The 11.5% cell had interface states (Ms) of 3 × 10 l° cm -2 eV-1 at zero volt bias in dark and when it was illuminated with 35 mW cm -2 light at zero volt bias Nls increased by two orders to 1.2x1012 cm -2 eV -1. At higher frequency the large voltage intercept of the Mott-Schottky plot indicates the existence of the near intrinsic layer of the polycrystailine heterojunction.