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Analysis of post deposition processing for CdTe/CdS thin film solar cells

โœ Scribed by Brian E. McCandless; Robert W. Birkmire


Publisher
Elsevier Science
Year
1991
Weight
457 KB
Volume
31
Category
Article
ISSN
0379-6787

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โœฆ Synopsis


A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400 ยฐC heat treatment with CdCl2 restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdS:,Te~_., layer with a narrower band gap than CdTe. Biracial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (Voc) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods.


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