The eects of thermal annealing in conjunction with CdCl 2 vapor heat treatment on the properties of CdTe/CdS thin ยฎlms and devices deposited by physical vapor deposition are reported. Results are compared for three treatment variations: hightemperature anneal only, high-temperature anneal followed b
Analysis of post deposition processing for CdTe/CdS thin film solar cells
โ Scribed by Brian E. McCandless; Robert W. Birkmire
- Publisher
- Elsevier Science
- Year
- 1991
- Weight
- 457 KB
- Volume
- 31
- Category
- Article
- ISSN
- 0379-6787
No coin nor oath required. For personal study only.
โฆ Synopsis
A post-deposition process for optimizing the efficiency of thin film CdTe/CdS solar cells deposited by physical vapor deposition has been developed and the effects of the individual process steps on the materials and device properties have been analyzed. A 400 ยฐC heat treatment with CdCl2 restructures the CdTe resulting in enhanced grain size and crystallographic reorientation. Structural and optical measurements indicate interdiffusion of sulfur and tellurium during the heat treatment resulting in formation of a CdS:,Te~_., layer with a narrower band gap than CdTe. Biracial current-voltage and quantum efficiency analysis of the CdTe devices at various stages of the optimization process shows the evolution of the device from a p-i-n structure to a heterojunction. A chemical treatment improves the open circuit voltage (Voc) and Cu/Au contact to the CdTe. The optimization process can be applied to cells using CdTe and CdS deposited by different methods.
๐ SIMILAR VOLUMES
In sequence, the deposited CdS thin film had undergone physical and optical changes by the processes of manufacturing CdS/CdTe solar cells. CdS thin film was manufactured by the Chemical Bath Deposition (CBD) method. The aqueous solution was based on ammonia solution. The temperature of bath system
Cadmium sulphide and cadmium telluride films have been electrodeposited for n-CdS/p-CdTe solar cells. Cell efficiency varied considerably from 9.5% to 11.5% for each deposition set. The reverse saturation currents of 9.5% and 11.5% cells at 298 K were 25 and 6.7 nA cm -2, respectively. The cells wit