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Predictive study of electronic properties of silicon–carbon alloys

✍ Scribed by A. Yakoubi; B. Bouhafs; M. Ferhat; P. Ruterana


Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
788 KB
Volume
122
Category
Article
ISSN
0921-5107

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We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si 3 N 4 , the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio