✦ LIBER ✦

Density functional study on electronic properties of P-doped spinel silicon carbon nitride

✍ Scribed by Yufen Zhang; Xian Zhao; Xiufeng Cheng; Yuguang Mu

Publisher: Elsevier Science
Year: 2008
Tongue: English
Weight: 311 KB
Volume: 181
Category: Article
ISSN: 0022-4596
DOI: 10.1016/j.jssc.2007.11.017

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✦ Synopsis

We performed density functional calculations on the electronic properties of P-doped spinel silicon carbon nitride. When Si is replaced by C at the tetrahedral sites of P-doped c-Si 3 N 4 , the band gap can be adjusted, and an insulator-to-metal transition is predicted to occur at the C-to-Si ratio of 0.27. Finally, some possible examinations and potential applications for the large band-gap reduction are discussed.

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