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Prediction of contact parameters from the topographies of contacting surfaces

✍ Scribed by A.M. Jones; P.W. O'Callaghan; S.D. Probert

Publisher: Elsevier Science
Year: 1975
Tongue: English
Weight: 1009 KB
Volume: 31
Category: Article
ISSN: 0043-1648
DOI: 10.1016/0043-1648(75)90124-6

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## Abstract Samples of some thickness and extent showed fine cracks on the brink already after oxidization in Ga~2~O~3~ which became more distinctive after nitriding into GaN. Current‐voltage characteristics were recorded from different long nitrided samples with contacts of In, Sn, Sb, and Te. The