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Precise measurement of the 23P0−23P2 fine structure interval in helium

✍ Scribed by W.E. Frieze; E.A. Hinds; V.W. Hughes; F.M.J. Pichnick


Book ID
107985680
Publisher
Elsevier Science
Year
1980
Tongue
English
Weight
251 KB
Volume
78
Category
Article
ISSN
0375-9601

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This capacitor is located just under the device, but not under the conductor I/O to avoid a parasitic capacitive coupling. With the coming of leadless and leaded full array chip carriers such as pin grid array, we applied the same concept with a capacitor inside the cap. The results with different c