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Precipitate strain relief via point defect interaction: models for SiO2 in silicon

✍ Scribed by W.J. Taylor; U.M. Gösele; T.Y. Tan


Book ID
113300380
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
41 KB
Volume
36
Category
Article
ISSN
0254-0584

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